Synopsys eMRAM Compiler IP
Synopsys eMRAM Compiler is a non-volatile memory IP solution that enables designers to achieve higher memory capacity (2Mb to 128Mb), with a smaller footprint and lower power consumption compared to other non-volatile options.
The Synopsys eMRAM IP solution enables designers to quickly embed secure, radiation-tolerant on-chip persistent memory in SoCs at 22nm and below. This solution addresses the growing demand for cost-effective, efficient memory capacity in high-reliability AI-enabled applications such as automotive, aerospace and IoT.
Synopsys eMRAM is a complete, configurable IP solution that includes embedded voltage circuitry, built-in self-test (BIST) and repair, and error correction code (ECC). This allows faster SoC integration, accelerating time to market.
Synopsys eMRAM is enhanced for reliability and endurance, providing differentiated features like read-modify-write, write-verify-write, and programmable reference voltage generation. We designed it for automotive applications supporting 150?C junction temperature.
In addition, Synopsys provides a variety of solutions to help accelerate the integration of the high-quality eMRAM, including Synopsys Self-Test and Repair (STAR) Memory System?, Synopsys STAR ECC Compiler IP, and Synopsys Silicon Lifecycle Management Family.
Figure 1: Configurable eMRAM IP provides flexibility for multiple word widths, aspect ratios, and floorplan optimizations
Download Synopsys eMRAM Datasheet
- Configurable 2Mb to 128Mb memory compiler for high-reliability applications
- Smaller area and lower power compared to other high-capacity persistent memory options
- Complete solution includes embedded voltage circuitry, built-in self-test (BIST) and repair, and error correction code (ECC) for faster SoC integration
- Support up to 2-bit Correct+3-bit Detect ECC
- BIST support through Star Memory System (SMS)
- Standard embedded memory interface simplifies system architecture
- Up to 100K write cycle endurance
- Automotive ready
- Data securely stored and resistant to reverse engineering
- Utilizes radiation-tolerant MRAM bits for high-reliability applications
- Wide operating temperature range: -40¡ãC to 150¡ãC
- Over 45% area reduction compared to standard ultra-high-density SRAMs